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Volumn 92, Issue 13, 2008, Pages

Analysis of electronic memory traps in the oxide-nitride-oxide structure of a polysilicon-oxide-nitride-oxide-semiconductor flash memory

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE; CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONIC STRUCTURE; FLASH MEMORY; POLYSILICON; SEMICONDUCTOR STORAGE;

ELECTRONIC MEMORY TRAPS; POLYSILICON-OXIDE-NITRIDE-OXIDE-SEMICONDUCTORS; VERTICAL DISTRIBUTION;

ELECTRON TRAPS;

EID: 41649099254 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2830000 Document Type: Article

Times cited : (30)

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