A novel gate-injection program/erase p-channel NAND-type flash memory with high (10M cycle) endurance

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2007, Pages 140-141

  Lue, Hang Ting ^a   Lai, Erh Kun ^a   Wang, Szu Yu ^a   Yang, Ling Wu ^a   Yang, Tahone ^a   Chen, Kuang Chao ^a   Hsieh, Kuang Yeu ^a   Liu, Rich ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DURABILITY; ELECTRIC CURRENTS; ELECTRON INJECTION; MOSFET DEVICES; NITRIDES; SULFATE MINERALS;

BAND GAPS; CHANNEL INTERFACES; CURRENT STRESSING; GATE INJECTION; GATE OXIDES; HOLE INJECTIONS; INTERFACE STATES; NAND-TYPE FLASH MEMORY; NON-VOLATILE MEMORY (NVM); NOVEL DEVICES; P-CHANNEL; POLY GATES; VLSI TECHNOLOGIES;

FLASH MEMORY;

EID: 47249122949     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2007.4339759     Document Type: Conference Paper

References (4)

1. H. T. Lue et al, in IEDM Tech. Diu., 2005, pp. 547-550.
2. D. W. Kang, et al, NVSM Workshop, pp. 40-41, 2004.
3. H.T. Lue, VLSI-TSA, 2007, to be published.
4. K.D. Suh, et al, IEEE Journal of Solid-State Circuits, pp. 1149-1156, 1995.