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Japanese Journal of Applied Physics

Volumn 50, Issue 3, 2011, Pages

Interfacial dipole at high-k dielectric/SiO2 interface: X-ray photoelectron spectroscopy characteristics

(6) Zhu, Li Qiang a,b Kita, Koji a Nishimura, Tomonori a Nagashio, Kosuke a Wang, Sheng Kai a Toriumi, Akira a

a UNIVERSITY OF TOKYO (Japan)

b NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING (China)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM COMPOUNDS; PHOTOELECTRICITY; PHOTONS; SILICATES;

BANDBENDING; FIXED CHARGES; FLAT-BAND VOLTAGE SHIFT; INTERFACIAL DIPOLES; SILICATE FORMATION;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 79953097616 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.031502 Document Type: Article

Times cited : (21)

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