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Volumn 105, Issue 2, 2009, Pages

X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy investigation of Al-related dipole at the HfO2 /Si interface

(9) Zhu, L Q a Barrett, N a Jgou P a Martin, F b Leroux, C b Martinez, E b Grampeix, H b Renault, O b Chabli, A b

a DIF (France)

b CEA LETI (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRON SPECTROSCOPY; ELECTRONS; HAFNIUM COMPOUNDS; LOGIC GATES; MOLECULAR ORBITALS; OZONE WATER TREATMENT; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTOIONIZATION; PHOTONS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR GROWTH; SILICATES; SPECTRUM ANALYSIS; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; ULTRAVIOLET SPECTROSCOPY;

ATOMIC LAYERS; GATE STACKS; HIGH - K DIELECTRICS; INTERFACIAL DIPOLES; METAL-OXIDE SEMICONDUCTORS; POTENTIAL APPLICATIONS; ULTRA-THIN OXIDE LAYERS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 59349112503 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3066906 Document Type: Article

Times cited : (31)

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