Observation of band bending of metal/high- k Si capacitor with high energy x-ray photoemission spectroscopy and its application to interface dipole measurement

Journal of Applied Physics

Volumn 104, Issue 10, 2008, Pages

  Kakushima, K ^a   Okamoto, K ^a   Tachi, K ^a   Song, J ^a   Sato, S ^a   Kawanago, T ^a   Tsutsui, K ^a   Sugii, N ^a   Ahmet, P ^a   Hattori, T ^a   Iwai, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BENDING (DEFORMATION); BINDING ENERGY; CAPACITANCE; CAPACITORS; DIELECTRIC DEVICES; ELECTRIC EQUIPMENT; EMISSION SPECTROSCOPY; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; HAFNIUM COMPOUNDS; LANTHANUM; LUMINESCENCE OF ORGANIC SOLIDS; MOS CAPACITORS; OZONE WATER TREATMENT; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; SEMICONDUCTING SILICON COMPOUNDS; SILICATES; SILICON;

BAND BENDINGS; BINDING ENERGY SHIFTS; CORE LEVELS; DOPED SUBSTRATES; HIGH ENERGIES; INTERFACE DIPOLES; PHOTOEMISSION SPECTROSCOPIES; POTENTIAL PROFILES; SEMICONDUCTOR CAPACITORS; SI SUBSTRATES; SPECTRUM BROADENING;

SUBSTRATES;

EID: 57049129311     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3021461     Document Type: Article

References (23)

1. X. P. Wang, M. F. Li, A. Chin, C. X. Zhu, J. Shao, W. Lu, X. C. Shen, X. F. Yu, R. Chi, C. Shen, A. C. H. Huan, J. S. Pan, A. Y. Du, P. Lo, D. S. H. Chan, and D. -L. Kwong, Solid-State Electron. 0038-1101 10.1016/j.sse.2006.05. 008 50, 986 (2006).
2. C. Hobbs, H. Tseng, K. Reid, B. Taylor, L. Dip, L. Hebert, R. Garcia, R. Hegde, J. Grant, D. Gilmer, A. Franke, V. Dnandapani, M. Azrak, L. Prabhu, R. Rai, S. Bagchi, J. Conner, S. Backer, F. Dumbuya, B. Nguyen, and P. Tobin, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2001, 651.
3. Y. Yamamoto, K. Kita, K. Kyuno, and A. Toriumi, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.46.7251 46, 7251 (2007).
4. K. Kakushima, K. Okamoto, M. Adachi, K. Tachi, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, and H. Iwai, Solid-State Electron. 0038-1101 10.1016/j.sse.2008.04.015 52, 1280 (2008).
5. K. Iwamoto, Y. Kamimuta, A. Ogawa, Y. Watanabe, S. Migita, W. Mizubayashi, Y. Morita, M. Takahashi, H. Ota, T. Nabatame, and A. Toriumi, Appl. Phys. Lett. 0003-6951 10.1063/1.2904650 92, 132907 (2008).
6. K. Kakushima, K. Okamoto, M. Adachi, K. Tachi, J. Song, S. Sato, T. Kawanago, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, and H. Iwai, Appl. Surf. Sci. 0169-4332 10.1016/j.apsusc.2008.02.177 254, 6106 (2008).
7. Y. Kamimuta, K. Iwamoto, Y. Nunoshige, A. Hirano, W. Mizubayashi, Y. Watanabe, S. Migita, A. Ogawa, H. Ota, T. Nabatame, and A. Toriumi, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2007, 341.
8. T. Hattori, T. Yoshida, T. Shiraishi, K. Takahashi, H. Nohira, S. Joumori, K. Nakajima, M. Suzuki, K. Kimura, I. Kashiwagi, C. Ohshima, S. Ohmi, and H. Iwai, Microelectron. Eng. 0167-9317 10.1016/j.mee.2004.01.005 72, 283 (2004).
9. M. H. Hecht, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.585023 8, 1018 (1990).
10. K. Kobayashi, M. Yabashi, Y. Takata, T. Tokushima, S. Shin, K. Tamasaku, D. Miwa, T. Ishikawa, H. Nohira, T. Hattori, Y. Sugita, O. Nakatsuka, A. Sakai, and S. Zaima, Appl. Phys. Lett. 0003-6951 10.1063/1.1595714 83, 1005 (2003).
11. M. T. K. Soh, J. H. Thomas, and J. J. Talghader, J. Vac. Sci. Technol. A 0734-2101 10.1116/1.2359734 24, 2147 (2006).
12. O. V. Yazyev and A. Pasquarello, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.96.157601 96, 157601 (2006).
13. M. Sacchi, F. Offi, P. Torelli, A. Fondacaro, C. Spezzani, M. Cautero, G. Cautero, S. Huotari, M. Grioni, R. Delaunay, M. Fabrizioli, G. Vanko, G. Monaco, G. Paolicelli, G. Stefani, and G. Panaccione, Phys. Rev. B 0163-1829 10.1103/PhysRevB.71.155117 71, 155117 (2005).
14. P. Unsworth, J. E. Evans, P. Weightman, A. Takahashi, J. A. D. Matthew, and Q. C. Herd, Phys. Rev. B 0163-1829 10.1103/PhysRevB.54.286 54, 286 (1996).
15. Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices (Cambridge University Press, New York, 1998), pp. 63-78.
16. S. Saito, K. Torii, M. Hiratani, and T. Onai, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2002.1004231 23, 348 (2002).
17. S. Tanuma, C. J. Powell, and D. R. Penn, Surf. Interface Anal. 0142-2421 10.1002/sia.1526 35, 268 (2003).
18. K. Tachi, H. Iwai, T. Hattori, N. Sugii, K. Tsutsui, P. Ahmet, and K. Kakushima, ECS Trans. 3, 425 (2006).
19. J. Hedman, Y. Baer, A. Berndtsson, M. Klasson, G. Leonhardt, R. Nilsson, and C. Nordling, J. Electron Spectrosc. Relat. Phenom. 0368-2048 10.1016/S0368-2048(98)00419-8 1, 101 (1972).
20. D. B. M. Klaassen, J. W. Slotboom, and H. C. De Graaff, Solid-State Electron. 0038-1101 10.1016/0038-1101(92)90051-D 35, 125 (1992).
21. Y. A. Teterin and A. Y. Teterin, Russ. Chem. Rev. 0036-021X 10.1070/RC2002v071n05ABEH000717 71, 347 (2002).
22. H. Iwai, S. Ohmi, S. Akama, C. Ohshima, A. Kikuchi, I. Kashiwagi, J. Taguchi, H. Yamamoto, J. Tonotani, Y. Kim, I. Ueda, A. Kuriyama, and Y. Yoshihara, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2002, 625.
23. K. Kakushima, K. Okamoto, M. Adachi, K. Tachi, S. Sato, T. Kawanago, J. Song, P. Ahmet, N. Sugii, K. Tsutsui, T. Hattori, and H. Iwai, ECS Trans. 13 (2), 29 (2008).