Oxygen-vacancy-induced threshold voltage shifts in Hf-related high-k gate stacks

Thin Solid Films

Volumn 508, Issue 1-2, 2006, Pages 305-310

  Shiraishi, Kenji ^a,b   Yamada, Keisaku ^b,c   Torii, Kazuyoshi ^d   Akasaka, Yasushi ^d   Nakajima, Kiyomi ^b   Konno, Mitsuru ^e   Chikyow, Toyohiro ^b   Kitajima, Hiroshi ^d   Arikado, Tsunetoshi ^d   Nara, Yasuo ^d  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c WASEDA UNIVERSITY   (Japan)

^d SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^e HITACHI LTD   (Japan)

Author keywords

Fermi level pinning; High k HfO2 dielectrics; Oxygen vacancy; Poly Si gates

Indexed keywords

DIELECTRIC MATERIALS; ELECTRON TRANSITIONS; FERMI LEVEL; HAFNIUM; THIN FILMS;

FERMI LEVEL PINNING; OXYGEN VACANCY; POLY-SI GATES;

THRESHOLD VOLTAGE;

EID: 33646114290     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.08.409     Document Type: Article

References (18)

1. Wilk G.D., and Wallace R.M. Appl. Phys. Lett. 74 (1999) 2854
2. Wilk G.D., Wallace R.M., and Anthony J.M. J. Appl. Phys. 89 (2001) 5243
3. In: Hobbs C., Fonseca L., Dhandapani V., Samavedam S., Taylor B., Grant J., Dip L., Triyoso D., Hegde R., Gilmer D., Garcia R., Roan D., Lovejoy L., Rai R., Hebert L., Tseng H., White B., and Tobin P. (Eds). Technical Digest of 2003 Symposium on VLSI Technology, Kyoto, Japan, June 10-12 (2003) 9
4. In: Koyama M., Kaneko A., Ino T., Koike M., Kamata Y., Iijima R., Kamimuta Y., Takashima A., Suzuki M., Hongo C., Inumiya S., Takayanagi M., and Nishiyama A. (Eds). Technical Digest of 2002 IEEE International Electron Devices Meeting, San Francisco, USA, December 9-11 (2002) 849
5. In: Takayanagi M., Watanabe T., Iijima R., Kaneko A., Inumiya S., Hirano I., Sekine K., Nishiyama A., Eguchi K., and Tsunashima Y. (Eds). Extended Abstracts of International Workshop on Gate Insulator, Tokyo, November 6-7 (2003) 174
6. In: Shiraishi K., Yamada K., Torii K., Akasaka Y., Nakajima K., Konno M., Chikyo T., Kitajima H., and Arikado T. (Eds). Technical Digest of 2004 Symposium on VLSI Technology, Honolulu, USA, June 15-17 (2004) 108
7. Shiraishi K., Yamada K., Torii K., Akasaka Y., Nakajima K., Konno M., Chikyo T., Kitajima H., and Arikado T. Jpn. J. Appl. Phys., Part 2 43 (2004) L1413
8. Hobbs C.C., Fonseca L.R.C., Knizhnik A., Dhandapani V., Samavedam S.B., Taylor W.J., Grant J.M., Dip L.G., Triyoso D.H., Hegde R.I., Gilmer D.C., Garcia R., Roan D., Lovejoy M.L., Rai R.S., Hebert E.A., Tseng H., Anderson S.G.H., White B.E., and Tobin P.J. IEEE Trans. Electron Devices 51 (2004) 978
9. Takeuchi H., Ha D., and King T.-J. J. Vac. Sci. Technol., A, Vac. Surf. Film 22 (2004) 1337
10. In: Yamada K. (Ed). Extended Abstracts of 1986 International Conference on Solid State Devices and Materials, Tokyo, Japan, August (1986) 257
11. Scopel W.L., da Silva A.J.R., Orellana W., and Fazzio A. Appl. Phys. Lett. 84 (2004) 1492
12. Oshiyama A. Jpn. J. Appl. Phys. 37 (1998) L232
13. In: Torii K., Shiraishi K., Miyazaki S., Yamabe K., Boero M., Chikyow T., Yamada K., Kitajima H., and Arikado T. (Eds). Technical Digest of 2004 IEEE International Electron Device Meeting, San Francisco, USA, December 13-15 (2004) 129
14. In: Cartier E., Narayanan V., Gusev E.P., Jamison P., Linder B., Steen M., Chan K.K., Frank M., Bojarczuk N., Copel M., Cohen A., Callegari A., Zafar S., Gribelyuk M., Chudzik M., Cabral Jr. C., Carruthers R.A., D'Emic C., Newbury J., Lacey D., Guha S., and Jammy R. (Eds). Technical Digest of 2004 Symposium on VLSI Technology, Honolulu, USA, June 15-17 (2004) 44
15. In: Pantisano L., Chen P.J., Afanas'ev V., Ragnarsson L.-A., Pourtois G., and Groeseneken G. (Eds). Technical Digest of 2004 Symposium on VLSI Technology, Honolulu, USA, June 15-17 (2004) 122
16. In: Ikenaga E., Hirosawa I., Takata Y., Chainani A., Kitajima H., Muto A., Maeda T., Torii K., Tamasaku K., Nishino Y., Ishizawa T., Shin S., Komiya S., and Kobayashi K. (Eds). Extended Abstract 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices, Tokyo, Japan, May 26-28 (2004) 83
17. In: Sugimura M., Ohta A., Nakagawa H., Shibaguchi T., Higashi S., and Miyazaki S. (Eds). Extended Abstracts of the 2004 Conference on Solid State Device and Materials, Tokyo, Japan, September 15-17 (2004) 792
18. In: Miyamaura M., Masuzaki K., Watanabe H., Ikarashi N., and Tatsumi T. (Eds). Extended Abstracts of 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices, Tokyo, Japan, May 26-28 (2004) 13