Electronic properties of vacancy-oxygen complex in Ge crystals

Applied Physics Letters

Volumn 81, Issue 10, 2002, Pages 1821-1823

  Markevich, V P ^a   Hawkins, I D ^a   Peaker, A R ^a   Litvinov, V V ^b   Murin, L I ^c   Dobaczewski, L ^d   Lindstrom J L ^e  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b BELARUSIAN STATE UNIVERSITY   (Belarus)

^c INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^d INSTITUTE OF PHYSICS   (Poland)

^e LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

A-CENTER; ABSORPTION LINES; CHARGE STATE; DOUBLE NEGATIVES; STRETCHING VIBRATIONS; VACANCY-OXYGEN COMPLEXES;

ELECTRONIC PROPERTIES; GERMANIUM; STRETCHING;

OXYGEN;

EID: 79956050561     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1504871     Document Type: Article

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