Drain-to-gate field engineering for improved frequency response of GaN-based HEMTs

Solid-State Electronics

Volumn 52, Issue 8, 2008, Pages 1217-1220

  Pala, N ^a,b   Hu, X ^a   Deng, J ^a   Yang, J ^a   Gaska, R ^a   Yang, Z ^a   Koudymov, A ^a   Shur, M S ^b   Simin, G ^c  

^a SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c The Department of Mechanical Engineering   (United States)

Author keywords

Electric fields; Gallium nitride; High electron mobility transistor (HEMT)

Indexed keywords

GALLIUM ALLOYS; GALLIUM NITRIDE; METALLIZING; SEMICONDUCTING GALLIUM; SEPARATION; SULFATE MINERALS;

ALGAN GAN; CONVENTIONAL DEVICES; DRAIN BIAS; FREQUENCY BEHAVIORS; GATE DRAIN; GATE FIELDS; HIGH POWERS; HIGH-FREQUENCY (HF); OUTPUT POWERS; RF GAIN;

FREQUENCY RESPONSE;

EID: 48749132247     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.05.010     Document Type: Article

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