Physics-based simulation of field-plate effects on substrate- and surface-related current slump in GaAs FETs

European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009

Volumn , Issue , 2009, Pages 164-167

  Tanaka, T ^a   Itagaki, K ^a   Nakajima, A ^a   Horio, K ^a  

^a SHIBAURA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT SLUMP; CURRENT TRANSIENTS; FIELD PLATES; GAAS-FET; HIGH FREQUENCY PERFORMANCE; I - V CURVE; INSULATOR THICKNESS; OPTIMUM VALUE; PHYSICS-BASED SIMULATION; SURFACE STATE; TRANSIENT CHARACTERISTIC; TWO-DIMENSIONAL TRANSIENT SIMULATION;

FIELD EFFECT TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUITS; MESFET DEVICES; MICROWAVE INTEGRATED CIRCUITS; MICROWAVES; SEMICONDUCTING GALLIUM; SUBSTRATES; TRANSIENTS; TWO DIMENSIONAL;

GALLIUM ALLOYS;

EID: 72449192156     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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