In situ relaxed Si1-xGex epitaxial layers with low threading dislocation densities grown on compliant Si-on-insulator substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 3, 1998, Pages 1489-1491

  Yang, Z ^a   Alperin, J ^a   Wang, W I ^a   Iyer, S S ^a,d   Kuan, T S ^b   Semendy, F ^c  

^a Fu Foundation School of Engineering and Applied Science   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

^d IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000963278     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (18)

1. S. S. Iyer, G. L. Patton, J. M. C. Stork, B. S. Meyerson, and D. L. Harame, IEEE Trans. Electron Devices 36, 2043 (1989).
2. M. Miyake, T. Kobayashi, K. Deguchi, M. Kimizuka, S. Horiguchi, and K. Kiuchi, IEEE Electron Device Lett. 8, 266 (1987).
3. K. Ismail, J. O. Chu, and M. Arafa, IEEE Electron Device Lett. 18, 435 (1997); U. Konig, A. J. Boers, F. Shaffler, and E. Kasper, Electron. Lett. 28, 160 (1992).
4. K. Ismail, J. O. Chu, and M. Arafa, IEEE Electron Device Lett. 18, 435 (1997); U. Konig, A. J. Boers, F. Shaffler, and E. Kasper, Electron. Lett. 28, 160 (1992).
5. R. C. Taft, J. D. Plummer, and S. S. Iyer, IEEE Trans. Electron Devices 39, 2119 (1992).
6. K. L. Wang, R. P. Karunasiri, J. Park, S. S. Rhee, and C. H. Chern, Superlattices Microstruct. 5, 201 (1989).
7. Y. H. Xie, D. Monroe, E. A. Fitzgerald, P. J. Silverman, F. A. Thiel, and G. P. Watson, Appl. Phys. Lett. 63, 2263 (1993).
8. K. Ismail, M. Arafa, K. L. Saenger, J. O. Chu, and B. S. Meyerson, Appl. Phys. Lett. 66, 1077 (1995).
9. A. Powell, S. S. Iyer, and F. K. LeGoues, Appl. Phys. Lett. 64, 1856 (1994); Z. Yang, F. Guarin, I. W. Tao, W. I. Wang, and S. S. Iyer, J. Vac. Sci. Technol. B 13, 789 (1995).
10. A. Powell, S. S. Iyer, and F. K. LeGoues, Appl. Phys. Lett. 64, 1856 (1994); Z. Yang, F. Guarin, I. W. Tao, W. I. Wang, and S. S. Iyer, J. Vac. Sci. Technol. B 13, 789 (1995).
11. M. O. Tanner, M. A. Chu, K. L. Wang, M. Meshkinpour, and M. S. Goorsky, J. Cryst. Growth 157, 121 (1995).
12. K. Izumi, M. Doken, and H. Ariyoshi, Electron. Lett. 14, 593 (1978).
13. S. S. Iyer, P. M. Pitner, T. S. Sedgewick, and M. J. Tejwari, Electrochem. Soc. Proc. 10, 391 (1994).
14. M. Bruel, Electron. Lett. 31, 1201 (1995).
15. Y. H. Lo, Appl. Phys. Lett. 59, 2311 (1991).
16. J. W. Matthew and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974); R. People and J. C. Bean, Appl. Phys. Lett. 47, 322 (1985).
17. J. W. Matthew and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974); R. People and J. C. Bean, Appl. Phys. Lett. 47, 322 (1985).
18. The 100 mm diameter SOI substrates were purchased from SiBond L.L.C. (Hopewell Junction, NY 12533).