Strain in epitaxial Si/SiGe graded buffer structures grown on Si(100), Si(110), and Si(111) optically evaluated by polarized Raman spectroscopy and imaging

Journal of Applied Physics

Volumn 107, Issue 1, 2010, Pages

  Mermoux, M ^a   Crisci, A ^b   Baillet, F ^b   Destefanis, V ^c   Rouchon, D ^d   Papon, A M ^d   Hartmann, J M ^d  

^a LEPMI   (France)

^b GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^c STMICROELECTRONICS   (France)

^d CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENT SUBSTRATES; GASEOUS PRECURSORS; GRADED BUFFER; GROWTH DIRECTIONS; IN-PLANE; IN-PLANE LATTICE PARAMETERS; POLARIZED RAMAN SPECTROSCOPY; RAMAN FREQUENCIES; RAMAN IMAGING; SELECTION RULES; SHIFT COEFFICIENTS; SI (1 1 1); SI SUBSTRATES; SI(1 0 0); SI(110); SI/SIGE; SIGE VIRTUAL SUBSTRATES; STRAINED-SI; SURFACE ARRAY; SURFACE ORIENTATION; UV-RAMAN SPECTROSCOPY;

RAMAN SCATTERING; RAMAN SPECTROSCOPY; SILICON; SILICON ALLOYS; SUBSTRATES; TENSILE STRAIN;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 75649132841     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3272824     Document Type: Article

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