Raman spectroscopy determination of composition and strain in Si1 - x Gex / Si heterostructures

Materials Science in Semiconductor Processing

Volumn 11, Issue 5, 2008, Pages 279-284

  Pezzoli, F ^a   Bonera, E ^a   Grilli, E ^a   Guzzi, M ^a   Sanguinetti, S ^a   Chrastina, D ^b   Isella, G ^b   von Kanel H ^b   Wintersberger, E ^c   Stangl, J ^c   Bauer, G ^c  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b POLITECNICO DI MILANO   (Italy)

^c JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

Alloy; Composition; Raman; SiGe; Strain

Indexed keywords

ALLOY COMPOSITIONS; CALIBRATION CURVES; COMPARATIVE ANALYSIS; COMPOSITION; EPITAXIAL SI; GE CONCENTRATIONS; HETEROEPITAXIAL LAYERS; HETEROSTRUCTURES; HIGH SPATIAL RESOLUTION; PHONON ENERGIES; QUANTITATIVE MEASUREMENT; RAMAN; RAMAN BANDS; RECIPROCAL SPACE MAPPING; SIGE; STRAIN CONDITIONS; SUBSTRATE LATTICE; SURFACE CONFINEMENT;

CALIBRATION; CRYSTALS; GERMANIUM; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

SILICON ALLOYS;

EID: 70349787586     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2008.09.012     Document Type: Article

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