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Journal of Applied Physics

Volumn 106, Issue 4, 2009, Pages

Structural properties of tensily strained Si layers grown on SiGe(100), (110), and (111) virtual substrates

(7) Destefanis, V a Rouchon, D b Hartmann, J M b Papon, A M b Baud, L b Crisci, A c Mermoux, M c

a STMICROELECTRONICS (France)

b CEA LETI (France)

c GRENOBLE INSTITUTE OF TECHNOLOGY (France)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; CHEMICAL MECHANICAL PLANARIZATIONS; CRYSTALLOGRAPHIC QUALITY; DEFECT-FREE; GE CONTENT; GRADED LAYERS; MISFIT DISLOCATIONS; PLANE STRAINS; PLASTIC RELAXATION; RAMAN MAPPING; RAMAN PROFILES; REDUCED PRESSURE CHEMICAL VAPOR DEPOSITION; SI (1 1 1); SI LAYER; SI(1 0 0); SIGE(100); STRAIN FIELDS; STRAIN LEVELS; STRAINED-SI; STRESS VALUES; SURFACE ARRAY; SURFACE ORIENTATION; SURFACE-ROUGHENING; UV- AND; UV-RAMAN SPECTROSCOPY; VIRTUAL SUBSTRATES; X- RAY DIFFRACTION;

CRYSTAL GROWTH; DEGRADATION; GERMANIUM; PHOTODEGRADATION; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON; SILICON ALLOYS; SINGLE CRYSTALS; SPECTRUM ANALYZERS; STACKING FAULTS; SURFACE ROUGHNESS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 69749121640 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3187925 Document Type: Article

Times cited : (18)

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