MBE growth of Ge/Si quantum dots upon low-energy pulsed ion irradiation

Thin Solid Films

Volumn 517, Issue 1, 2008, Pages 309-312

  Stepina, N P ^a,b   Dvurechenskii, A V ^a   Ambrister, V A ^a   Smagina, J V ^a   Volodin, V A ^a   Nenashev, A V ^a   Leitao J P ^b   do Carmo, M C ^b   Sobolev, N A ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

Ion bombardment; Molecular beam epitaxy; Quantum dots; Silicon germanium

Indexed keywords

ANNEALING; CRYSTAL GROWTH; DEFECTS; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; EPITAXIAL LAYERS; GERMANIUM; HYDROGEN; ION BOMBARDMENT; IONS; LIGHT EMISSION; LUMINESCENCE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OPTICAL WAVEGUIDES; PASSIVATION; QUANTUM ELECTRONICS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SILICON; VACUUM;

ATOMIC HYDROGEN TREATMENTS; BEFORE AND AFTER; BROAD BANDS; ENERGY SHIFTS; GE/SI QUANTUM DOTS; HIGH-TEMPERATURE; HYDROGEN PASSIVATIONS; IN-SITU; ION IRRADIATIONS; MBE GROWTHS; MOLECULAR-BEAM EPITAXIES; NONEQUILIBRIUM CHARACTERS; NONRADIATIVE RECOMBINATION CENTERS; NONRADIATIVE RECOMBINATION CHANNELS; PHOTO-LUMINESCENCE; PL INTENSITIES; PULSED ION BEAMS; QD SIZES; QUANTUM DOTS; RADIATION DEFECTS; RAMAN SPECTRUM; SILICON-GERMANIUM; STRUCTURES GROWN; VACUUM-ANNEALING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 54849407739     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.08.166     Document Type: Article

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