Growth of ultra-thin and highly relaxed SiGe layers under in-situ introduction of point defects

EPJ Applied Physics

Volumn 27, Issue 1-3, 2004, Pages 341-344

  Lyutovich, K ^a   Oehme, M ^a   Ernst, F ^b  

^a UNIVERSITY OF STUTTGART   (Germany)

^b Case Western Reserve University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); CRYSTAL DEFECTS; ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; MOSFET DEVICES; RELAXATION PROCESSES; STRAIN; THIN FILMS;

GETTERING EFFECTS; INTERACTION BETWEEN DIFFERENT CRYSTAL DEFECTS; MICROSCOPY OF SURFACES, INTERFACES, AND THIN FILMS; STRAIN RELAXATION; THIN FILM STRUCTURE AND MORPHOLOGY;

SILICON;

EID: 2342490236     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2004051     Document Type: Conference Paper

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