The role of piezoelectric fields in GaN-based quantum wells

MRS Internet Journal of Nitride Semiconductor Research

Volumn 3, Issue , 1998, Pages

  Hangleiter, Andreas ^a   Im, Jin Seo ^a   Kollmer, H ^a   Heppel, S ^a   Off, J ^a   Scholz, Ferdinand ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC EXCITATION; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; PIEZOELECTRICITY; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; TENSORS;

ENERGY LEVEL; OSCILLATOR STRENGTH; PIEZOELECTRIC FIELD; WAVEFUNCTION;

GALLIUM NITRIDE;

EID: 0008362537     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300000879     Document Type: Article

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