SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 88, Issue 4, 2011, Pages 336-341

InGaAs and Ge MOSFETs with high κ dielectrics

(7) Lee, W C a,b Chang, P b Lin, T D b Chu, L K b Chiu, H C b Kwo, J a,b Hong, M b

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

Atomic layer deposition; Germanium; High dielectrics; III V Compound semiconductor; Molecular beam epitaxy; MOSFETs

Indexed keywords

C-V CHARACTERISTIC; DEVICE PERFORMANCE; DIRECT DEPOSITION; ELECTRICAL LEAKAGE; ELECTRICAL PERFORMANCE; FREQUENCY DISPERSION; GATE-LENGTH; III-V COMPOUND SEMICONDUCTOR; INTERFACIAL DENSITY; INTERFACIAL PASSIVATION LAYERS; METAL WORK FUNCTION; MOSFETS; NMOSFETS; P-MOSFETS; PEAK MOBILITY; PEAK TRANSCONDUCTANCE; SELF-ALIGNED; THERMAL STABILITY;

ALUMINUM; ATOMIC LAYER DEPOSITION; DRAIN CURRENT; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; GADOLINIUM; GATES (TRANSISTOR); GERMANIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOSFET DEVICES; PASSIVATION; SEMICONDUCTING INDIUM; THERMODYNAMIC STABILITY; TRANSCONDUCTANCE;

GATE DIELECTRICS;

EID: 79751530285 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2010.08.030 Document Type: Conference Paper

Times cited : (11)

References (43)

1
- 79751535995
- International Technology Roadmap for Semiconductors (ITRS), 2009 Update
- International Technology Roadmap for Semiconductors (ITRS), 2009 Update. http://www.itrs.net/.

2
- 15844407150
- R. Chau, S. Datta, M. Doczy, B. Doyle, J. Jin, J. Kavalieros, A. Majumdar, M. Metz, and M. Radosavljevic IEEE Trans. Nanotechnol. 4 2005 153
- (2005) IEEE Trans. Nanotechnol. , vol.4 , pp. 153
- Chau, R.¹ Datta, S.² Doczy, M.³ Doyle, B.⁴ Jin, J.⁵ Kavalieros, J.⁶ Majumdar, A.⁷ Metz, M.⁸ Radosavljevic, M.⁹

3
- 34547861356
- M.W. Hong, J.R. Kwo, P.C. Tsai, Y.C. Chang, M.L. Huang, C.P. Chen, and T.D. Lin Jpn. J. Appl. Phys., Part 1 46 5 2007 3167
- (2007) Jpn. J. Appl. Phys., Part 1 , vol.46 , Issue.5 , pp. 3167
- Hong, M.W.¹ Kwo, J.R.² Tsai, P.C.³ Chang, Y.C.⁴ Huang, M.L.⁵ Chen, C.P.⁶ Lin, T.D.⁷

4
- 69249119394
- M. Heyns, and W. Tsai MRS Bull. 34 2009 485
- (2009) MRS Bull. , vol.34 , pp. 485
- Heyns, M.¹ Tsai, W.²

5
- 43049083322
- K.H. Shiu, T.H. Chiang, P. Chang, L.T. Tung, M. Hong, J. Kwo, and W. Tsai Appl. Phys. Lett. 92 2008 172904
- (2008) Appl. Phys. Lett. , vol.92 , pp. 172904
- Shiu, K.H.¹ Chiang, T.H.² Chang, P.³ Tung, L.T.⁴ Hong, M.⁵ Kwo, J.⁶ Tsai, W.⁷

6
- 79751526364
- Breckenridge, CO, USA
- W.C. Lee, T.H. Chiang, Y.D. Wu, J. Kwo, M. Hong, in: 27th N. Am. Mol. Beam Epitaxy Conf., Breckenridge, CO, USA, 2010.
- (2010) 27th N. Am. Mol. Beam Epitaxy Conf.
- Lee, W.C.¹ Chiang, T.H.² Wu, Y.D.³ Kwo, J.⁴ Hong, M.⁵

7
- 65949104293
- L.K. Chu, T.D. Lin, M.L. Huang, R.L. Chu, C.C. Chang, J. Kwo, and M. Hong Appl. Phys. Lett. 94 2009 202108
- (2009) Appl. Phys. Lett. , vol.94 , pp. 202108
- Chu, L.K.¹ Lin, T.D.² Huang, M.L.³ Chu, R.L.⁴ Chang, C.C.⁵ Kwo, J.⁶ Hong, M.⁷

8
- 77954218873
- L.K. Chu, R.L. Chu, T.D. Lin, W.C. Lee, C.A. Lin, M.L. Huang, Y.J. Lee, J. Kwo, and M. Hong Solid-State Electron. 54 2010 965
- (2010) Solid-State Electron. , vol.54 , pp. 965
- Chu, L.K.¹ Chu, R.L.² Lin, T.D.³ Lee, W.C.⁴ Lin, C.A.⁵ Huang, M.L.⁶ Lee, Y.J.⁷ Kwo, J.⁸ Hong, M.⁹

9
- 0035449019
- T.S. Lay, M. Hong, J. Kwo, J.P. Mannaerts, W.H. Hung, and D.J. Huang Solid-State Electron. 45 2001 1679
- (2001) Solid-State Electron. , vol.45 , pp. 1679
- Lay, T.S.¹ Hong, M.² Kwo, J.³ Mannaerts, J.P.⁴ Hung, W.H.⁵ Huang, D.J.⁶

10
- 59849105046
- M.L. Huang, Y.C. Chang, Y.H. Chang, T.D. Lin, J. Kwo, and M. Hong Appl. Phys. Lett. 94 2009 052106
- (2009) Appl. Phys. Lett. , vol.94 , pp. 052106
- Huang, M.L.¹ Chang, Y.C.² Chang, Y.H.³ Lin, T.D.⁴ Kwo, J.⁵ Hong, M.⁶

11
- 20844450055
- Y.L. Huang, P. Chang, Z.K. Yang, Y.J. Lee, H.Y. Lee, H.J. Liu, J. Kwo, J.P. Mannaerts, and M. Hong Appl. Phys. Lett. 86 2005 191905
- (2005) Appl. Phys. Lett. , vol.86 , pp. 191905
- Huang, Y.L.¹ Chang, P.² Yang, Z.K.³ Lee, Y.J.⁴ Lee, H.Y.⁵ Liu, H.J.⁶ Kwo, J.⁷ Mannaerts, J.P.⁸ Hong, M.⁹

12
- 33845227833
- C.P. Chen, Y.J. Lee, Y.C. Chang, Z.K. Yang, M. Hong, J. Kwo, H.Y. Lee, and T.S. Lay J. Appl. Phys. 100 2006 104502
- (2006) J. Appl. Phys. , vol.100 , pp. 104502
- Chen, C.P.¹ Lee, Y.J.² Chang, Y.C.³ Yang, Z.K.⁴ Hong, M.⁵ Kwo, J.⁶ Lee, H.Y.⁷ Lay, T.S.⁸

13
- 39749137699
- Y.C. Chang, M.L. Huang, K.Y. Lee, Y.J. Lee, T.D. Lin, M. Hong, J. Kwo, T.S. Lay, C.C. Liao, and K.Y. Cheng Appl. Phys. Lett. 92 2008 072901
- (2008) Appl. Phys. Lett. , vol.92 , pp. 072901
- Chang, Y.C.¹ Huang, M.L.² Lee, K.Y.³ Lee, Y.J.⁴ Lin, T.D.⁵ Hong, M.⁶ Kwo, J.⁷ Lay, T.S.⁸ Liao, C.C.⁹ Cheng, K.Y.¹⁰

14
- 56849118215
- H.C. Chiu, L.T. Tung, Y.H. Chang, Y.J. Lee, C.C. Chang, J. Kwo, and M. Hong Appl. Phys. Lett. 93 2008 202903
- (2008) Appl. Phys. Lett. , vol.93 , pp. 202903
- Chiu, H.C.¹ Tung, L.T.² Chang, Y.H.³ Lee, Y.J.⁴ Chang, C.C.⁵ Kwo, J.⁶ Hong, M.⁷

15
- 78751471677
- Y.D. Wu, T.D. Lin, T.H. Chiang, Y.C. Chang, H.C. Chiu, Y.J. Lee, M. Hong, C.A. Lin, and J. Kwo J. Vac. Sci. Technol. B 28 2010 C3H10
- (2010) J. Vac. Sci. Technol. B , vol.28
- Wu, Y.D.¹ Lin, T.D.² Chiang, T.H.³ Chang, Y.C.⁴ Chiu, H.C.⁵ Lee, Y.J.⁶ Hong, M.⁷ Lin, C.A.⁸ Kwo, J.⁹

16
- 0031146596
- M. Hong, J.P. Mannaerts, J.E. Bowers, J. Kwo, M. Passlack, W.-Y. Hwang, and L.W. Tu J. Cryst. Growth 175/176 1997 422
- (1997) J. Cryst. Growth , vol.175-176 , pp. 422
- Hong, M.¹ Mannaerts, J.P.² Bowers, J.E.³ Kwo, J.⁴ Passlack, M.⁵ Hwang, W.-Y.⁶ Tu, L.W.⁷

17
- 63349092891
- J. Kwo, and M. Hong J. Cryst. Growth 311 2009 1944
- (2009) J. Cryst. Growth , vol.311 , pp. 1944
- Kwo, J.¹ Hong, M.²

18
- 50849107353
- C.P. Chen, T.D. Lin, Y.J. Lee, Y.C. Chang, M. Hong, and J. Kwo Solid-State Electron. 52 2008 1615
- (1615) Solid-State Electron. , vol.52 , Issue.2008
- Chen, C.P.¹ Lin, T.D.² Lee, Y.J.³ Chang, Y.C.⁴ Hong, M.⁵ Kwo, J.⁶

19
- 48249114071
- T.D. Lin, H.C. Chiu, P. Chang, L.T. Tung, C.P. Chen, M. Hong, J. Kwo, W. Tsai, and Y.C. Wang Appl. Phys. Lett. 93 2008 033516
- (2008) Appl. Phys. Lett. , vol.93 , pp. 033516
- Lin, T.D.¹ Chiu, H.C.² Chang, P.³ Tung, L.T.⁴ Chen, C.P.⁵ Hong, M.⁶ Kwo, J.⁷ Tsai, W.⁸ Wang, Y.C.⁹

20
- 77952962191
- T.D. Lin, P. Chang, H.C. Chiu, M. Hong, J. Kwo, Y.S. Lin, and S.S.H. Hsu J. Vac. Sci. Technol. B 28 2010 C3H14
- (2010) J. Vac. Sci. Technol. B , vol.28
- Lin, T.D.¹ Chang, P.² Chiu, H.C.³ Hong, M.⁴ Kwo, J.⁵ Lin, Y.S.⁶ Hsu, S.S.H.⁷

21
- 76549106006
- H.C. Chiu, P. Chang, M.L. Huang, T.D. Lin, Y.H. Chang, J.C. Huang, S.Z. Chen, J. Kwo, W. Tsai, and M. Hong 67th Device Res. Conf. Dig. 2009 83
- (2009) 67th Device Res. Conf. Dig. , pp. 83
- Chiu, H.C.¹ Chang, P.² Huang, M.L.³ Lin, T.D.⁴ Chang, Y.H.⁵ Huang, J.C.⁶ Chen, S.Z.⁷ Kwo, J.⁸ Tsai, W.⁹ Hong, M.¹⁰

22
- 69249135034
- M. Hong, J. Kwo, T.D. Lin, and M.L. Huang MRS Bull. 34 2009 514
- (2009) MRS Bull. , vol.34 , pp. 514
- Hong, M.¹ Kwo, J.² Lin, T.D.³ Huang, M.L.⁴

23
- 78751558557
- T.D. Lin, H.C. Chiu, P. Chang, Y.H. Chang, Y.D. Wu, M. Hong, and J. Kwo Solid-State Electron. 54 2010 915
- (2010) Solid-State Electron. , vol.54 , pp. 915
- Lin, T.D.¹ Chiu, H.C.² Chang, P.³ Chang, Y.H.⁴ Wu, Y.D.⁵ Hong, M.⁶ Kwo, J.⁷

24
- 77950103851
- H. C. Chiu, T. D. Lin, P. Chang, W. C. Lee, C. H. Chiang, J. Kwo, Y. S. Lin, S. S. H. Hsu, T. W., and M. Hong, International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (2009) 141.
- (2009) International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) , pp. 141
- Chiu, H.C.¹ Lin, T.D.² Chang, P.³ Lee, W.C.⁴ Chiang, C.H.⁵ Kwo, J.⁶ Lin, Y.S.⁷ Hsu, S.S.H.⁸ W, T.⁹ Hong, M.¹⁰

25
- 0032142397
- F. Ren, J.M. Kuo, M. Hong, W.S. Hobson, J.R. Lothian, J. Lin, H.S. Tsai, J.P. Mannaerts, J. Kwo, S.N.G. Chu, Y.K. Chen, and A.Y. Cho IEEE Electron. Device Lett. 19 1998 309
- (1998) IEEE Electron. Device Lett. , vol.19 , pp. 309
- Ren, F.¹ Kuo, J.M.² Hong, M.³ Hobson, W.S.⁴ Lothian, J.R.⁵ Lin, J.⁶ Tsai, H.S.⁷ Mannaerts, J.P.⁸ Kwo, J.⁹ Chu, S.N.G.¹⁰ Chen, Y.K.¹¹ Cho, A.Y.¹²

26
- 0032644085
- Y.C. Wang, M. Hong, J.M. Kuo, J.P. Mannaerts, J. Kwo, H.S. Tsai, J.J. Krajewski, J.S. Weiner, Y.K. Chen, and A.Y. Cho Mat. Res. Soc. Symp. Proc. 1999 219
- (1999) Mat. Res. Soc. Symp. Proc. , pp. 219
- Wang, Y.C.¹ Hong, M.² Kuo, J.M.³ Mannaerts, J.P.⁴ Kwo, J.⁵ Tsai, H.S.⁶ Krajewski, J.J.⁷ Weiner, J.S.⁸ Chen, Y.K.⁹ Cho, A.Y.¹⁰

27
- 50249144058
- Y. Xuan, Y.Q. Wu, T. Shen, T. Yang, and P.D. Ye Tech. Dig. - Int. Electron. Devices Meet. 2007 637
- (2007) Tech. Dig. - Int. Electron. Devices Meet. , pp. 637
- Xuan, Y.¹ Wu, Y.Q.² Shen, T.³ Yang, T.⁴ Ye, P.D.⁵

28
- 41749086201
- Y. Xuan, Y.Q. Wu, and P.D. Ye IEEE Electron. Device Lett. 29 2008 294
- (2008) IEEE Electron. Device Lett. , vol.29 , pp. 294
- Xuan, Y.¹ Wu, Y.Q.² Ye, P.D.³

29
- 66249095195
- Y. Xuan, T. Shen, M. Xu, Y.Q. Wu, and P.D. Ye Tech. Dig. - Int. Electron. Devices Meet. 2008 371
- (2008) Tech. Dig. - Int. Electron. Devices Meet. , pp. 371
- Xuan, Y.¹ Shen, T.² Xu, M.³ Wu, Y.Q.⁴ Ye, P.D.⁵

30
- 68249144753
- H.C. Chin, X. Gong, X.K. Liu, and Y.C. Yeo IEEE Electron. Device Lett. 30 2009 805
- (2009) IEEE Electron. Device Lett. , vol.30 , pp. 805
- Chin, H.C.¹ Gong, X.² Liu, X.K.³ Yeo, Y.C.⁴

31
- 36549081349
- R.J.W. Hill, D.A.J. Moran, X. Li, H. Zhou, D. Macintyre, S. Thoms, A. Asenov, P. Zurcher, K. Rajagopalan, J. Abrokwah, R. Droopad, M. Passlack, and L.G. Thayne IEEE Electron. Device Lett. 28 2007 1080
- (2007) IEEE Electron. Device Lett. , vol.28 , pp. 1080
- Hill, R.J.W.¹ Moran, D.A.J.² Li, X.³ Zhou, H.⁴ MacIntyre, D.⁵ Thoms, S.⁶ Asenov, A.⁷ Zurcher, P.⁸ Rajagopalan, K.⁹ Abrokwah, J.¹⁰ Droopad, R.¹¹ Passlack, M.¹² Thayne, L.G.¹³

32
- 34249811762
- Y. Sun, E.W. Kiewra, S.J. Koester, N. Ruiz, A. Callegari, K.E. Fogel, D.K. Sadana, J. Fompeyrine, D.J. Webb, J.P. Locquet, M. Sousa, R. Germann, K.T. Shiu, and S.R. Forrest IEEE Electron. Device Lett. 28 2007 473
- (2007) IEEE Electron. Device Lett. , vol.28 , pp. 473
- Sun, Y.¹ Kiewra, E.W.² Koester, S.J.³ Ruiz, N.⁴ Callegari, A.⁵ Fogel, K.E.⁶ Sadana, D.K.⁷ Fompeyrine, J.⁸ Webb, D.J.⁹ Locquet, J.P.¹⁰ Sousa, M.¹¹ Germann, R.¹² Shiu, K.T.¹³ Forrest, S.R.¹⁴

33
- 34247095621
- M. Hong, W.C. Lee, M.L. Huang, Y.C. Chang, T.D. Lin, Y.J. Lee, J. Kwo, C.H. Hsu, and H.Y. Lee Thin Solid Films 515 2007 5581
- (2007) Thin Solid Films , vol.515 , pp. 5581
- Hong, M.¹ Lee, W.C.² Huang, M.L.³ Chang, Y.C.⁴ Lin, T.D.⁵ Lee, Y.J.⁶ Kwo, J.⁷ Hsu, C.H.⁸ Lee, H.Y.⁹

34
- 77951623017
- M. Radosavljevic, B. Chu-Kung, S. Corcoran, G. Dewey, M.K. Hudait, J.M. Fastenau, J. Kavalieros, W.K. Liu, D. Lubyshev, M. Metz, K. Millard, N. Mukherjee, W. Rachmady, U. Shah, and R. Chau Tech. Dig. - Int. Electron. Devices Meet. 2009 319
- (2009) Tech. Dig. - Int. Electron. Devices Meet. , pp. 319
- Radosavljevic, M.¹ Chu-Kung, B.² Corcoran, S.³ Dewey, G.⁴ Hudait, M.K.⁵ Fastenau, J.M.⁶ Kavalieros, J.⁷ Liu, W.K.⁸ Lubyshev, D.⁹ Metz, M.¹⁰ Millard, K.¹¹ Mukherjee, N.¹² Rachmady, W.¹³ Shah, U.¹⁴ Chau, R.¹⁵

35
- 45049085545
- M. Caymax, M. Houssa, G. Pourtois, F. Bellenger, K. Martens, A. Delabie, and S.V. Elshocht Appl. Surf. Sci. 254 2008 6094
- (2008) Appl. Surf. Sci. , vol.254 , pp. 6094
- Caymax, M.¹ Houssa, M.² Pourtois, G.³ Bellenger, F.⁴ Martens, K.⁵ Delabie, A.⁶ Elshocht, S.V.⁷

36
- 17944374662
- F. Gao, S.J. Lee, J.S. Pan, L.J. Tang, and D.L. Kwong Appl. Phys. Lett. 86 2005 113501
- (2005) Appl. Phys. Lett. , vol.86 , pp. 113501
- Gao, F.¹ Lee, S.J.² Pan, J.S.³ Tang, L.J.⁴ Kwong, D.L.⁵

37
- 78751542111
- M. Caymax, G. Eneman, F. Bellenger, C. Merckling, A. Delabie, G. Wang, R. Loo, E. Simoen, J. Mitard, B.D. Jaeger, G. Hellings, K.D. Meyer, M. Meuris, and M. Heyns Tech. Dig. - Int. Electron. Devices Meet. 2009 461
- (2009) Tech. Dig. - Int. Electron. Devices Meet. , pp. 461
- Caymax, M.¹ Eneman, G.² Bellenger, F.³ Merckling, C.⁴ Delabie, A.⁵ Wang, G.⁶ Loo, R.⁷ Simoen, E.⁸ Mitard, J.⁹ Jaeger, B.D.¹⁰ Hellings, G.¹¹ Meyer, K.D.¹² Meuris, M.¹³ Heyns, M.¹⁴

38
- 44649084238
- C.H. Lee, T.D. Lin, L.T. Tung, M.L. Huang, M. Hong, and J. Kwo J. Vac. Sci. Technol. B 26 2008 1128
- (2008) J. Vac. Sci. Technol. B , vol.26 , pp. 1128
- Lee, C.H.¹ Lin, T.D.² Tung, L.T.³ Huang, M.L.⁴ Hong, M.⁵ Kwo, J.⁶

39
- 79751528824
- R.L. Chu, T.D. Lin, L.K. Chu, M.L. Huang, C.C. Chang, C.A. Lin, M. Hong, and J. Kwo J. Vac. Sci. Technol. B 28 2010 C3A1
- (2010) J. Vac. Sci. Technol. B , vol.28
- Chu, R.L.¹ Lin, T.D.² Chu, L.K.³ Huang, M.L.⁴ Chang, C.C.⁵ Lin, C.A.⁶ Hong, M.⁷ Kwo, J.⁸

40
- 39749167824
- K. Martens, C.O. Chui, G. Brammertz, B.D. Jaeger, D. Kuzum, M. Meuris, M. Heyns, T. Krishnamohan, K. Saraswat, H.E. Maes, and G. Groeseneken IEEE Trans. Electron. Devices 55 2008 547
- (2008) IEEE Trans. Electron. Devices , vol.55 , pp. 547
- Martens, K.¹ Chui, C.O.² Brammertz, G.³ Jaeger, B.D.⁴ Kuzum, D.⁵ Meuris, M.⁶ Heyns, M.⁷ Krishnamohan, T.⁸ Saraswat, K.⁹ Maes, H.E.¹⁰ Groeseneken, G.¹¹

41
- 74349089220
- Y. Nakakita, R. Nakane, T. Sasada, H. Matsubara, M. Takenaka, and S. Takagi Tech. Dig. - Int. Electron. Devices Meet. 2008 877
- (2008) Tech. Dig. - Int. Electron. Devices Meet. , pp. 877
- Nakakita, Y.¹ Nakane, R.² Sasada, T.³ Matsubara, H.⁴ Takenaka, M.⁵ Takagi, S.⁶

42
- 67049116017
- R. Xie, T.H. Phung, W. He, M. Yu, and C. Zhu IEEE Trans. Electron. Devices 56 2009 1330
- (2009) IEEE Trans. Electron. Devices , vol.56 , pp. 1330
- Xie, R.¹ Phung, T.H.² He, W.³ Yu, M.⁴ Zhu, C.⁵

43
- 78751513222
- L.K. Chu, R.L. Chu, C.A. Lin, T.D. Lin, T.H. Chiang, J. Kwo, and M. Hong 68th Device Res. Conf. Dig. 2010 83
- (2010) 68th Device Res. Conf. Dig. , pp. 83
- Chu, L.K.¹ Chu, R.L.² Lin, C.A.³ Lin, T.D.⁴ Chiang, T.H.⁵ Kwo, J.⁶ Hong, M.⁷

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.