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Journal of Vacuum Science and Technology B

Volumn 29, Issue 1, 2011, Pages

Atomic layer deposition temperature dependent minority carrier generation in ZrO2 / GeO2 /Ge capacitors

(7) Bethge, O a Abermann, S a Henkel, C a Smoliner, J a Bertagnolli, E a Straif, C J a Hutter, H a

a VIENNA UNIVERSITY OF TECHNOLOGY (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CAPACITORS; CHARGE CARRIERS; CHARGE COUPLED DEVICES; GERMANIUM OXIDES; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GERMANIUM; SUBSTRATES; ZIRCONIA;

DEPOSITION TEMPERATURES; ELECTRICAL AND STRUCTURAL PROPERTIES; HIGH FREQUENCY CAPACITANCE; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; MINORITY CARRIER GENERATION; SUBSTRATE TEMPERATURE; THERMAL ACTIVATION ENERGIES; TIME-OF-FLIGHT SECONDARY ION MASS SPECTROSCOPY;

ATOMIC LAYER DEPOSITION;

EID: 79551622490 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3521472 Document Type: Conference Paper

Times cited : (2)

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