Improvement in C-V characteristics of Ge metal-oxide semiconductor capacitor by H2 O2 incorporated HCl pretreatment

Applied Physics Letters

Volumn 92, Issue 6, 2008, Pages

  Kamata, Yoshiki ^a   Ino, Tsunehiro ^a   Koyama, Masato ^a   Nishiyama, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; IMPURITIES; MOS DEVICES; SURFACE TREATMENT;

RESIDUAL METAL IMPURITIES;

CAPACITORS;

EID: 39349116411     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2857477     Document Type: Article

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