Admittance study of GaAs high- k metal-insulator-semiconductor capacitors with Si interface control layer

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 4, 2008, Pages 1569-1578

  Akazawa, Masamichi ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADMINISTRATIVE DATA PROCESSING; CAPACITANCE; CAPACITORS; CARRIER MOBILITY; DIELECTRIC DEVICES; DISPERSION (WAVES); ELECTRIC CONDUCTIVITY; ELECTRIC EQUIPMENT; ENERGY STORAGE; GALLIUM ALLOYS; METAL INSULATOR BOUNDARIES; METALS; MIS DEVICES; MOSFET DEVICES; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; SEMICONDUCTOR MATERIALS; SEPARATION; SILICON; STANDARDS; SURFACE RELAXATION; SWITCHING CIRCUITS;

C-V CURVES; CAPACITANCE VARIATIONS; DOUBLE LAYER; FLAT-BAND VOLTAGE; FREE REGION; FREQUENCY DISPERSIONS; HIGH FREQUENCIES; INTERFACE CONTROL; INTERFACE CONTROL LAYER; INTERFACE STATE CHARGE; INTERFACE STATES; METAL-INSULATOR-SEMICONDUCTOR CAPACITORS; METAL-OXIDE SEMICONDUCTORS; RELAXATION FREQUENCIES; SADDLE POINTS;

SEMICONDUCTING SILICON;

EID: 49749083125     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2952456     Document Type: Article

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