Impact of germanium surface conditioning and ALD-growth temperature on Al2O3/ZrO2 high-k dielectric stacks

Journal of the Electrochemical Society

Volumn 156, Issue 10, 2009, Pages

  Bethge, Ole ^a   Abermann, Stephan ^a   Henkel, Christoph ^a   Straif, Christoph J ^a   Hutter, Herbert ^a   Bertagnolli, Emmerich ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN VOLTAGE; DEPOSITION TEMPERATURES; ELECTRICAL PROPERTY; GERMANIUM SUBSTRATES; GERMANIUM SURFACE; HIGH-K DIELECTRIC; HIGH-K OXIDES; INVERSION CAPACITANCE; MEASUREMENT FREQUENCY; ORDER OF MAGNITUDE; PRE-TREATMENT; PRE-TREATMENTS; SUBSTRATE PREPARATION;

ALUMINUM; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; FILM PREPARATION; GERMANIUM; LEAKAGE CURRENTS; ZIRCONIUM ALLOYS;

SUBSTRATES;

EID: 69549105975     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3205455     Document Type: Article

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