Determination of the lateral barrier height of inhomogeneous Au/n-type InP/In Schottky barrier diodes

Semiconductor Science and Technology

Volumn 22, Issue 8, 2007, Pages 851-854

  Cimilli, F E ^a   Salam, M ^a   Turut A ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS CURRENTS; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; LINEAR SYSTEMS; SEMICONDUCTOR DOPING; STATISTICAL METHODS;

BARRIER HEIGHT VALUE; IDEALITY FACTORS; LATERAL BARRIER HEIGHT;

SCHOTTKY BARRIER DIODES;

EID: 34547399962     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/8/003     Document Type: Article

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