Metal-induced gap states model of nonideal Au/Si Schottky barrier with low defect density

Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 925-929

  Maeda, Keiji ^a   Kitahara, Eiji ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON EMISSION; ENERGY GAP; FERMI LEVEL; GOLD; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; THERMAL EFFECTS;

METAL-INDUCED GAP STATES (MIGS); SCHOTTKY BARRIERS;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 17444451247     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00178-0     Document Type: Article

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