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Volumn 357, Issue 3-4, 2005, Pages 386-397

Current transport in Zn/p-Si(1 0 0) Schottky barrier diodes at high temperatures

Author keywords

Interface states; Interfacial insulator layer; Schottky barrier diode; Series resistance; Temperature dependence of Schottky barrier height

Indexed keywords

ACTIVATION ENERGY; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; INTERFACES (MATERIALS); NATURAL FREQUENCIES; SILICON; THERMOCOUPLES;

EID: 14544290471     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2004.12.003     Document Type: Article
Times cited : (101)

References (34)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.