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Volumn 357, Issue 3-4, 2005, Pages 386-397
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Current transport in Zn/p-Si(1 0 0) Schottky barrier diodes at high temperatures
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Author keywords
Interface states; Interfacial insulator layer; Schottky barrier diode; Series resistance; Temperature dependence of Schottky barrier height
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Indexed keywords
ACTIVATION ENERGY;
ELECTRIC CURRENTS;
ELECTRIC RESISTANCE;
INTERFACES (MATERIALS);
NATURAL FREQUENCIES;
SILICON;
THERMOCOUPLES;
CURRENT TRANSPORT;
INTERFACE STATES;
INTERFACIAL INSULATOR LAYER;
SCHOTTKY BARRIER DIODE;
SERIES RESISTANCE;
TEMPERATURE DEPENDENCE OF SCHOTTKY BARRIER HEIGHT;
SEMICONDUCTOR DIODES;
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EID: 14544290471
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physb.2004.12.003 Document Type: Article |
Times cited : (101)
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References (34)
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