Enhancement of a-IZO TTFT performance by using Y2O 3/Al2O3 bilayer dielectrics

Electrochemical and Solid-State Letters

Volumn 14, Issue 2, 2011, Pages

  Chen, Ai Hua ^a   Liang, Ling Yan ^a   Zhang, Hai Zhong ^a   Liu, Zhi Min ^a   Ye, Xiao Juan ^a   Yu, Zheng ^a   Cao, Hong Tao ^a  

^a NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; CAPPING LAYER; COMPARISON STUDY; DETRIMENTAL EFFECTS; DEVICE PERFORMANCE; RADIO FREQUENCIES; TRANSPARENT THIN FILM TRANSISTOR;

ALUMINUM; AMORPHOUS FILMS; CARBON DIOXIDE; ELECTRON TRAPS; SURFACE REACTIONS; THIN FILM TRANSISTORS;

ELECTRON AFFINITY;

EID: 78951479393     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3519412     Document Type: Article

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