Effects of rapid thermal process on structural and electrical characteristics of Y2O3 thin films by r.f.-magnetron sputtering

Thin Solid Films

Volumn 289, Issue 1-2, 1996, Pages 234-237

  Horng, R H ^a   Wuu, D S ^a   Yu, J W ^a   Kung, C Y ^b  

^a DA YEH UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

Dielectric properties; Metal oxide semiconductor structure; Sputtering; Yttrium oxide

Indexed keywords

ANNEALING; CAPACITANCE; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; OXIDES; PERMITTIVITY; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL EFFECTS;

RAPID THERMAL PROCESSING; YTTRIUM OXIDE;

THIN FILMS;

EID: 0030283858     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)08907-9     Document Type: Article

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