High-performance a-IGZO TFT with ZrO2 gate dielectric fabricated at room temperature

IEEE Electron Device Letters

Volumn 31, Issue 3, 2010, Pages 225-227

  Lee, Jae Sang ^a,b   Chang, Seongpil ^a   Koo, Sang Mo ^b   Lee, Sang Yeol ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Kwangwoon University   (South Korea)

Author keywords

Amorphous indium gallium zinc oxide (a IGZO) thin film transistor (TFT); High on current; ZrO2

Indexed keywords

GATE VOLTAGES; HIGH FIELD EFFECT MOBILITY; INDIUM GALLIUM ZINC OXIDES; ON CURRENTS; ROOM TEMPERATURE; SUBTHRESHOLD SWING; THERMAL TREATMENT;

AMORPHOUS FILMS; DIELECTRIC MATERIALS; GALLIUM; GATE DIELECTRICS; GATES (TRANSISTOR); INDIUM; SEMICONDUCTING ORGANIC COMPOUNDS; ZINC; ZINC OXIDE; ZIRCONIUM ALLOYS;

THIN FILM TRANSISTORS;

EID: 77649184425     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2038806     Document Type: Article

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