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Volumn 27, Issue 4, 2009, Pages 831-835

Fluorination mechanisms of Al2 O3 and Y2 O3 surfaces irradiated by high-density C F4 / O 2 and S F6 / O2 plasmas

Author keywords

[No Author keywords available]

Indexed keywords

BONDING ENERGIES; HIGH-DENSITY; PLASMA-INDUCED; REACTION PROBABILITY;

EID: 67650305938     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3112624     Document Type: Article
Times cited : (66)

References (17)
  • 3
    • 50249086877 scopus 로고    scopus 로고
    • Proceedings of the IEEE, International Symposium on Semiconductor Manufacturing, Paper No. PO-O-210,.
    • K. Miwa, T. Sawai, M. Aoyama, F. Inoue, A. Oikawa, and K. Imaoka, Proceedings of the IEEE, International Symposium on Semiconductor Manufacturing, Paper No. PO-O-210, p. 479 (2007).
    • (2007) , pp. 479
    • Miwa, K.1    Sawai, T.2    Aoyama, M.3    Inoue, F.4    Oikawa, A.5    Imaoka, K.6
  • 15
    • 67650323211 scopus 로고    scopus 로고
    • National Institute of Standards and Technology, Gaithersburg, 2003 NIST X-ray Photoelectron Spectroscopy Database, Version 3.5.
    • National Institute of Standards and Technology, Gaithersburg, 2003 NIST X-ray Photoelectron Spectroscopy Database, Version 3.5 (http://srdata.nist.gov/ xps/).
  • 17
    • 0003401227 scopus 로고
    • Basic 4th ed., edited by The Chemical Society of Japan (Maruzen, Tokyo) (Kagaku Binran in Japanese).
    • Handbook of Chemistry, Basic 4th ed., edited by The Chemical Society of Japan (Maruzen, Tokyo, 1993) (Kagaku Binran in Japanese).
    • (1993) Handbook of Chemistry


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.