Enhancement-mode GaN hybrid MOS-HFETs on Si substrates with over 70 a operation

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2009, Pages 21-24

  Kambayashi, Hiroshi ^a   Satoh, Yoshihiro ^a   Niiyama, Yuki ^a   Kokawa, Takuya ^a   Iwami, Masayuki ^a   Nomura, Takehiko ^a   Kato, Sadahiro ^a   Chow, T Paul ^b  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROSTRUCTURES; BEST VALUE; BREAKDOWN VOLTAGE; CHANNEL WIDTHS; ENHANCEMENT-MODE; MAXIMUM DRAIN CURRENT; MOS-HFETS; N-CHANNEL; ON-STATE RESISTANCE; POWER SWITCHING APPLICATIONS; SI SUBSTRATES; SILICON SUBSTRATES;

DRAIN CURRENT; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; POWER ELECTRONICS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES;

GALLIUM ALLOYS;

EID: 72949101855     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2009.5157991     Document Type: Conference Paper

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