Over 2 a operation at 250°C of GaN metal-oxide-semiconductor field effect transistors on sapphire substrates

Japanese Journal of Applied Physics

Volumn 47, Issue 9 PART 1, 2008, Pages 7128-7130

  Niiyama, Yuki ^a   Kambayashi, Hiroshi ^a   Ootomo, Shinya ^a   Nomura, Takehiko ^a   Yoshida, Seikoh ^a   Chow, Tat Sing Paul ^b  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

GaN; High temperature operation; Large current; MOSFETs; Normally off; Power devices

Indexed keywords

CORUNDUM; DIELECTRIC DEVICES; DRAIN CURRENT; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MOS DEVICES; MOSFET DEVICES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS; TRANSISTORS;

GAN; HIGH-TEMPERATURE OPERATION; LARGE CURRENT; MOSFETS; NORMALLY OFF; POWER DEVICES;

GALLIUM ALLOYS;

EID: 55149110324     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.7128     Document Type: Article

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