Experimental demonstration of novel high-voltage epilayer RESURF GaN MOSFET

IEEE Electron Device Letters

Volumn 30, Issue 10, 2009, Pages 1018-1020

  Huang, Weixiao ^a,b   Chow, T Paul ^a   Niiyama, Yuki ^c   Nomura, Takehiko ^c   Yoshida, Seikoh ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

^c FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

Epilayer RESURF; Gallium nitride; High voltage; MOSFET; N channel

Indexed keywords

BREAKDOWN VOLTAGE; CHANNEL LENGTH; GAN EPILAYERS; HIGH-VOLTAGE MOSFET; HIGH-VOLTAGES; MOSFET; N-CHANNEL; SPECIFIC-ON-RESISTANCE;

ELECTRIC BREAKDOWN; EPILAYERS; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOSFET DEVICES; SEMICONDUCTING GALLIUM;

GALLIUM ALLOYS;

EID: 72049118732     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2027820     Document Type: Article

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