Enhancement-mode GaN hybrid MOS-HEMTs with breakdown voltage of 1300V

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2009, Pages 279-282

  Tang, K ^a   Li, Z ^a   Chow, T P ^a   Niiyama, Y ^b   Nomura, T ^b   Yoshida, S ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Yokohama R and D Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; BREAKDOWN VOLTAGE; DIELECTRIC ISOLATION; ENHANCEMENT-MODE; MG-DOPED; N-CHANNEL; P-TYPE GAN; SAPPHIRE SUBSTRATES;

ELECTRIC BREAKDOWN; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES;

GALLIUM ALLOYS;

EID: 77950008037     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2009.5158056     Document Type: Conference Paper

References (9)

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