High-power AlGaN/GaN HFET with a lower on-state resistance and a higher switching time for an inverter circuit

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2003, Pages 58-61

  Yoshida, Seikoh ^a   Li, Jiang ^a   Wada, Takahiro ^a   Takehara, Hironari ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INVERTERS; ELECTRIC RESISTANCE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SWITCHING CIRCUITS;

ON-STATE RESISTANCE;

FIELD EFFECT TRANSISTORS;

EID: 0041931053     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)

1. T.P. Chow, R. Tysgi, "Wide bandgap compound semiconductors for superior high-voltage unipolar power devices," IEEE Trans Electron Devices, Vol.41, pp. 1481-1483, 1994.
2. J. Pankove, S.S. Chang, H.C. Chang, H.C. Lee, R.J. Molnar, T.D. Moustakas, "High-temperature GaN/SiC heterojunction bipolar transistor with high gain." IEDM Tech Dig, pp.389-92, 1994.
3. O. Akutes, Z.F. Fan, S.N. Mohammad, A.E. Botehkarev, H. Morkoç, "High temperature characteristics of AlGaN/GaN modulation doped field effect transistors." Appl Phys Lett, Vol. 69, pp.3872-3874, 1996.
4. W. Yang, J. Lu, M. Asifkhan, I. Adesida, "AlGaN/GaN HEMTs on SiC with over 100 GHz fT and low microwave noise." IEEE Trans Electron Devices, Vol.48, pp.581-585, 2001.
5. S. Yoshida, J. Suzuki, "Reliability of GaN metal semiconductor field effect transistor at high temperature." Jpn J Appl Phys Lett, Vol.37, pp.482-484, 1998.
6. S. Yoshida, J. Suzuki, "Characterization of GaN bipolar transistor after operation at 300°C for 300 h." Jpn J Appl Phys Lett, Vol.38, pp.851-853, 1999.
7. S. Yoshida, H. Ishii, "A high power GaN-based field effect transistor for large current operation." Phys Status Solidi (a), Vol. 188, pp,243-246, 2001.
8. N.-Q. Zhang, B. Moran, S.P. Denbaars, U.K. Mishara, X.W. Wang, T.P. Ma, "Kilovolt AlGaN/GaN HEMTs as switching devices." Phys Stat Sol, Vol.188, pp.213-217, 2001.
9. X. Hu, A. Tarakji, A. Kumar, G. Simm, J.W. Yang, M.A. Kahn, R. Gaska, and MS. Shur, "Large periphery AlGaN/GaN nsetal-oxide-seraiconductor heterostructure field effect transistors on SiC substrates." In: Proceedings of the international workshop on nitride semiconductors, IPAP conference, vol.1, pp. 946-948, 2000.
10. C.E. Weiteel, "Wide bandgap semiconductor power electronics." Tech Dig Int Electron Devices Meet, pp.51-54, 1998.
11. S. Yoshida, H. Ishii, J. Li, "AlGaN/GaN hetero field effect transistor for a large current operation." Mater. Sci. Forum, Vol.389-393, pp.1527-1530, 2002,
12. S. Yoshida, D. Wang, M. Ichikawa, "A very low contact resistance AlGaN/GaN heterojunction field effect transistor using selective area growth technique by gas-source molecular beam epitaxy." Jpn. J. Appl. Phys., Vol41, pp.820-822, 2002.
13. G. Deboy, M. Marz, J.-P. Stengl, J. Tihanyi, H. Weber, " A new generation of high voltage MOS-FETs breaks the limit line of Silicon, Tec. Dig. Int'l Electron Device Meeting (IEDM'98), PP.683 685, San Francisco, 1998.
14. 2 at 680 V silicon superjunction MOSFET", Proc. Int'l Symp. on Power Semiconductor Devices & ICs (ISPSD'02), pp.241-244, Santa Fe, June 2002.