High hole mobility GeOI pMOSFETs with high-k / metal gate on Ge condensation wafers

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2007, Pages 19-20

  Clavelier, L ^a   Damlencourt, J F ^a   Le Rover, C ^a   Vincent, B ^a   Morand, Y ^b   Campidelli, Y ^b   Hartmann, J M ^a   Martinez, E ^a   Nguyen, Q T ^c   Cristoloveanu, S ^c   Deleonibus, S ^a   Bensahel, D ^b  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

^c IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 43549109421     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2007.4357832     Document Type: Conference Paper

References (6)

1. Q.T Nguyen et al., to be published in EuroSOI (2007)
2. C. Rossel et al., Electrochem. Soc. Proc., 05 - pp. 479-285 (2003)
3. J.F. Damlencourt et al., to be published in Electrochem. Soc. Proc., (2007)
4. J.F. Damlencourt et al., Conference Digest of the 3rd Int. SiGe Techn. and Dev. Meet.- p. 202 - (2006)
5. S. Nakaharai et al, Appl. Phy. Lett., 83 - 3516 (2003)
6. F. Andrieu et al., IEEE International Electron Devices Meeting 2006, pp 641-644, (2006)