Self-consistent calculation for valence subband structure and hole mobility in p-channel inversion layers

Journal of Computational Electronics

Volumn 7, Issue 3, 2008, Pages 176-180

  Zhang, Yan ^a   Kim, Jiseok ^a   Fischetti, M V ^a  

^a University of Massachusetts   (United States)

Author keywords

Eight band; III V; K p; p channels; Pseudopotential; Self consistent; Six band; Valenceband

Indexed keywords

HOLE MOBILITY; INDIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

EIGHT-BAND; III-V; P-CHANNELS; PSEUDOPOTENTIAL; SELF-CONSISTENT; SIX-BAND; VALENCEBAND;

SEMICONDUCTOR QUANTUM WELLS;

EID: 50949083016     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-007-0159-1     Document Type: Article

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