A fast k · p solver for hole inversion layers with an efficient 2D k-space discretization

Journal of Computational Electronics

Volumn 7, Issue 3, 2008, Pages 99-102

  Pham, Anh Tuan ^a   Meinerzhagen, Bernd ^a   Jungemann, Christoph ^b  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

Double gatep MOS structures; K p method; Mobility modeling

Indexed keywords

MOSFET DEVICES; SEMICONDUCTING SILICON; SILICON;

DOUBLE-GATEP MOS STRUCTURES; K-SPACE; MOBILITY MODELING;

PROBABILITY DENSITY FUNCTION;

EID: 50949098278     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-007-0155-5     Document Type: Article

References (6)

1. Wang, E.X., et al.: Physics of Hole Transport in Strained Silicon MOSFET inversion layers. IEEE Trans. Electron Devices 53(8), 1840 (2006)
2. Fischetti, M.V., et al.: Six-band k · p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness. J. Appl. Phys. 94, 1079 (2003)
3. Michielis, M.D., et al.: A new analytical model for the energy dispersion in two-dimensional hole inversion layers. Solid-State Electron. 51, 598 (2007)
4. Pham, A.T., et al.: Modeling of hole inversion layer mobility in unstrained and uniaxially strained Si on arbitrarily oriented substrate. In: Proceedings of ESSDERC (2007)
5. Pham, A.T., et al.: Physics-based modeling of hole inversion layer mobility in strained SiGe on insulator. IEEE Trans. Electron Devices 54 (9), 2174 (2007)
6. Hildebrand, F.B.: Introduction to Numerical Analysis. McGraw-Hill, New York (1956)