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Volumn 158, Issue 2, 2011, Pages

Dielectric properties of thermal and plasma-assisted atomic layer deposited Al2 O3 thin Films

(7) Jinesh, K B a,d Van Hemmen, J L b Van De Sanden, M C M b Roozeboom, F b Klootwijk, J H c Besling, W F A a Kessels, W M M b

a NXP SEMICONDUCTORS (Netherlands)

b EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

c PHILIPS RESEARCH LABORATORIES (Netherlands)

d NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ELECTRODES; ALUMINUM OXIDES; ATOMIC LAYER DEPOSITED; BREAKDOWN ELECTRIC FIELD; DIELECTRIC PERMITTIVITIES; ELECTRICAL CHARACTERIZATION; LEAKAGE CURRENT MEASUREMENTS; OXIDE CHARGE DENSITY; OXIDE TRAP CHARGE; POOLE-FRENKEL; SINGLE REACTOR; THERMAL ALD; TUNNEL BARRIER;

ALUMINUM COATINGS; ATOMIC LAYER DEPOSITION; ELECTRIC FIELDS; OXIDE FILMS; PERMITTIVITY; PLASMAS;

ALUMINUM;

EID: 78650723200 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3517430 Document Type: Article

Times cited : (78)

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