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Journal of Applied Physics

Volumn 106, Issue 11, 2009, Pages

Plasma-assisted atomic layer deposition of TiN/ Al2 O 3 stacks for metal-oxide-semiconductor capacitor applications

(6) Hoogeland, D a Jinesh, K B b,c Roozeboom, F a,b Besling, W F A b Van De Sanden, M C M a Kessels, W M M a

a EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

b NXP SEMICONDUCTORS (Netherlands)

c HOLST CENTRE (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; BREAKDOWN ELECTRIC FIELD; C-V HYSTERESIS; CAPACITANCE VOLTAGE MEASUREMENTS; CURRENT-VOLTAGE MEASUREMENTS; DEPOSITION TEMPERATURES; DIELECTRIC CONSTANTS; FOWLER-NORDHEIM TUNNELING; HIGH QUALITY; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; OXIDE CHARGE DENSITY; SINGLE REACTOR; SUBSTRATE TEMPERATURE; TEST STRUCTURE; TIME-DEPENDENT DIELECTRIC BREAKDOWN;

ALUMINUM; CAPACITANCE; CAPACITORS; DEPOSITION; ELECTRIC FIELDS; ELECTRON TUBE DIODES; LEAKAGE CURRENTS; MOS CAPACITORS; PLASMA DEPOSITION; PULSED LASER DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SMELTING; STOICHIOMETRY; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; WEIBULL DISTRIBUTION;

PLASMA DIAGNOSTICS;

EID: 72449168880 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3267299 Document Type: Article

Times cited : (49)

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