Atomic layer deposited alumina (Al2O3) thin films on a high-Q mechanical silicon oscillator

Journal of Micromechanics and Microengineering

Volumn 17, Issue 4, 2007, Pages 737-742

  Hahtela, O ^a   Sievila P ^a   Chekurov, N ^a   Tittonen, I ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ATOMIC LAYER DEPOSITION; FILM THICKNESS; OSCILLATORS (ELECTRONIC); SEMICONDUCTING SILICON; THERMAL EFFECTS;

ALUMINA FILMS; HIGH-Q MECHANICAL SILICON OSCILLATOR; RESONANCE FREQUENCY; SINGLE-LAYER ANTI-REFLECTION COATING; UNCOATED OSCILLATORS;

THIN FILMS;

EID: 34249027033     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/17/4/010     Document Type: Conference Paper

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