Factors limiting minority carrier lifetime in solar grade silicon produced by the metallurgical route

Solar Energy Materials and Solar Cells

Volumn 95, Issue 2, 2011, Pages 564-572

  Osinniy, V ^a   Bomholt, P ^a   Nylandsted Larsen, A ^a   Enebakk, E ^b   Soiland A K ^b   Tronstad, R ^b   Safir, Y ^c  

^a AARHUS UNIVERSITY   (Denmark)

^b Elkem Carbon AS   (Norway)

^c RAcell Solar A/S   (Denmark)

Author keywords

Deep level transient spectroscopy; Minority carrier lifetime; Solar grade silicon; Transmission and scanning electron microscopy; X ray fluorescence

Indexed keywords

AVERAGE LIFETIME; COMPLEMENTARY METHODS; DLTS; EXTENDED DEFECT; HIGH CONCENTRATION; LARGE-GRAIN; MICROWAVE PHOTOCONDUCTIVITY; MINORITY CARRIER LIFETIMES; MINORITY-CARRIER LIFETIME; MULTICRYSTALLINE SILICON WAFERS; P-TYPE; RECOMBINATION CENTERS; SECONDARY ION MASS SPECTROSCOPY; SILICON INGOT; SOLAR GRADE SILICONS; SPATIAL DISTRIBUTION; STRUCTURAL DEFECT; X RAY FLUORESCENCE;

CARRIER LIFETIME; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; FLUORESCENCE; GRAIN BOUNDARIES; INGOTS; METALLURGY; POLYSILICON; SCANNING; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; X RAYS;

SILICON WAFERS;

EID: 78650684882     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.09.017     Document Type: Article

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