Iron detection in crystalline silicon by carrier lifetime measurements for arbitrary injection and doping

Journal of Applied Physics

Volumn 95, Issue 3, 2004, Pages 1021-1028

  Macdonald, D H ^a   Geerligs, L J ^a   Azzizi, A ^a  

^a TNO   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CARRIER CONCENTRATION; COMPUTER SIMULATION; CRYSTALLINE MATERIALS; DISSOCIATION; PHOTOCONDUCTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; SILICON WAFERS; SOLUBILITY; THERMAL EFFECTS; VELOCITY;

CRYSTALLINE SILICON; INJECTION LEVEL; PHOTOVOLTAIC-GRADE CAST MULTICRYSTALLINE SILICON WAFERS; QUASI-STEADY-STATE PHOTOCONDUCTANCE;

IRON;

EID: 1142304524     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1637136     Document Type: Article

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