Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration

Applied Physics Letters

Volumn 89, Issue 4, 2006, Pages

  Buonassisi, T ^d,e   Istratov, A A ^g   Pickett, M D ^g   Marcus, M A ^a   Ciszek, T F ^b,f   Weber, E R ^a,c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^c University of California Berkeley   (United States)

^d Applied Science and Technology Group   (United States)

^e Evergreen Solar Inc   (United States)

^f Siliconsultant   (United States)

^g NONE

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DECORATION; ELECTRON BACKSCATTER DIFFRACTION; METAL PRECIPITATION; METAL SUICIDE PRECIPITATE FORMATION;

BACKSCATTERING; DIFFRACTION; ETCHING; GRAIN BOUNDARIES; MICROSTRUCTURE; PRECIPITATION (CHEMICAL);

SILICON;

EID: 33746653381     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2234570     Document Type: Article

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