On the electronic improvement of multi-crystalline silicon via gettering and hydrogénation

Progress in Photovoltaics: Research and Applications

Volumn 16, Issue 2, 2008, Pages 129-134

  Tan, J ^a   Cuevas, A ^a   Macdonald, D ^a   Trupke, T ^b   Bardos, R ^b   Roth, K ^c  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

^c Roth and Rau AG   (Germany)

Author keywords

Gettering; Hydrog nation; mc Si; SiN

Indexed keywords

CARRIER CONCENTRATION; CRYSTALLINE MATERIALS; ELECTRON TRAPS; GETTERS; HYDROGENATION; PHOTOLUMINESCENCE;

ELECTRONIC IMPROVEMENT; GETTERING; IRON CONCENTRATION; MC SI; MULTICRYSTALLINE SILICON; TRAP DENSITY;

SILICON NITRIDE;

EID: 41049100498     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.775     Document Type: Article

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