Growth rate and impurity distribution in multicrystalline silicon for solar cells

Materials Science and Engineering: A

Volumn 413-414, Issue , 2005, Pages 545-549

  Kvande, Rannveig ^a   Mjøs, Øyvind ^a   Ryningen, Birgit ^a  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

Author keywords

Directional solidification; Electron lifetime; Impurity distribution; Multicrystalline silicon; Solidification rate

Indexed keywords

COMPOSITION; COOLING; CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; DIFFUSION; ELECTRONS; PHASE INTERFACES; SILICON SOLAR CELLS; SOLIDIFICATION; TEMPERATURE MEASUREMENT;

ELECTRON LIFETIME; GROWTH RATE; IMPURITY DISTRIBUTION; MULTICRYSTALLINE SILICON; OXYGEN DIFFUSION; SOLIDIFICATION RATE;

SILICON;

SOLIDIFICATION;

EID: 29444436350     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msea.2005.09.035     Document Type: Article

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