Morphology and strain of self-assembled semipolar GaN quantum dots in (112̄2) AlN

Journal of Applied Physics

Volumn 108, Issue 10, 2010, Pages

  Dimitrakopulos, G P ^a   Kalesaki, E ^a   Kioseoglou, J ^a   Kehagias, T H ^a   Lotsari, A ^a   Lahourcade, L ^b   Monroy, E ^b   Hausler I ^c   Kirmse, H ^c   Neumann, W ^c   Jurczak, G ^d   Young, T D ^d   Duewski, P ^d   Komninou, P H ^a   Karakostas, T H ^a  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b CEA GRENOBLE   (France)

^c HUMBOLDT UNIVERSITY   (Germany)

^d INSTITUTE OF FUNDAMENTAL TECHNOLOGICAL RESEARCH   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO; ALN; DENSITY FUNCTIONAL THEORY CALCULATIONS; ELECTROSTATIC FIELD; FINITE ELEMENT SIMULATIONS; GAN QUANTUM DOTS; GROWTH DIRECTIONS; HIGH-RESOLUTION TEM; LOWER ENERGIES; NANOFACETS; NON-POLAR; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; POTENTIAL DROP; PYRAMIDAL MORPHOLOGIES; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SELF-ASSEMBLED; SEMIPOLAR; STRAIN STATE; TEM;

DENSITY FUNCTIONAL THEORY; GALLIUM ALLOYS; GALLIUM NITRIDE; MORPHOLOGY; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 78650283234     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3506686     Document Type: Conference Paper

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