Step-induced misorientation of GaN grown on r -plane sapphire

Applied Physics Letters

Volumn 93, Issue 2, 2008, Pages

  Smalc Koziorowska, J ^a,d   Dimitrakopulos, G P ^a   Sahonta, S L ^a   Tsiakatouras, G ^b,c   Georgakilas, A ^b,c   Komninou, Ph ^a  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b UNIVERSITY OF CRETE   (Greece)

^c INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^d WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

A PLANE; AVERAGE DIAMETER; MIS ORIENTATION; NON-POLAR; PLANE SAPPHIRE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY (PA-MBE);

CORUNDUM; CRYSTAL GROWTH; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PULSED LASER DEPOSITION; SAPPHIRE; SEMICONDUCTING GALLIUM;

GALLIUM ALLOYS;

EID: 47549087127     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2953438     Document Type: Article

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