Polar AlN/GaN interfaces: Structures and energetics

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 8, 2009, Pages 1892-1897

  Kioseoglou, J ^a   Kalesaki, E ^a   Lymperakis, L ^b   Dimitrakopulos, G P ^a   Komninou, Ph ^a   Karakostas, Th ^a  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b MAX PLANCK INSTITUT FÜR EISENFORSCHUNG GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO; AB INITIO ANALYSIS; AB INITIO METHOD; ALN; BAND GAP ENERGY; BAND GAPS; BIAXIAL STRAINS; CRITICAL THICKNESS; EMPIRICAL CALCULATIONS; EMPIRICAL POTENTIALS; EXPERIMENTAL OBSERVATION; HETEROSTRUCTURES; INTERATOMIC POTENTIAL; LATTICE PARAMETERS; LINEAR DEPENDENCE; MISFIT DISLOCATIONS; POLAR INTERFACE; STRUCTURAL CONFIGURATIONS; WURTZITES; ZINC BLENDE;

ATOMS; ENERGY GAP; GALLIUM NITRIDE; HETEROJUNCTIONS; INTERFACIAL ENERGY; LITHIUM BATTERIES; MOLECULAR DYNAMICS; PHASE INTERFACES; SEMICONDUCTING GALLIUM; ZINC; ZINC SULFIDE;

LATTICE MISMATCH;

EID: 68649121715     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200881436     Document Type: Conference Paper

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