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Physica Status Solidi (B) Basic Research

Volumn 247, Issue 7, 2010, Pages 1637-1640

Interfacial structure of semipolar AlN grown on m-plane sapphire by MBE

(6) Kehagias, Th a Lahourcade, L b Lotsari, A a Monroy, E b Dimitrakopulos, G P a Komninou, Ph a

a ARISTOTLE UNIVERSITY OF THESSALONIKI (Greece)

b CEA GRENOBLE (France)

Author keywords

High resolution transmission electron microscopy; III N semiconductors; Interface structure; Nitridation; Semipolar

Indexed keywords

EID: 77954607286 PISSN: 03701972 EISSN: 15213951 Source Type: Journal
DOI: 10.1002/pssb.200983675 Document Type: Article

Times cited : (14)

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