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Journal of Applied Physics

Volumn 106, Issue 8, 2009, Pages

Polarization-induced charge carrier separation in polar and nonpolar grown GaN quantum dots

(3) Marquardt, Oliver a Hickel, Tilmann a Neugebauer, Jörg a

a MAX PLANCK INSTITUT FÜR EISENFORSCHUNG GMBH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER SEPARATION; ELECTRON HOLE; ELECTRONS AND HOLES; GAN QUANTUM DOTS; INDUCED CHARGES; KP MODELS; NON-POLAR; NON-POLAR SURFACES; POLARIZATION POTENTIAL; QUANTUM DOT; RECOMBINATION RATE; SPATIAL SEPARATION; SYSTEMATIC STUDY; WURTZITE GAN/ALN QUANTUM DOTS;

CHARGE CARRIERS; GALLIUM NITRIDE; OPTICAL WAVEGUIDES; POLARIZATION; SEMICONDUCTING GALLIUM; ZINC SULFIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 70350702461 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3246864 Document Type: Article

Times cited : (29)

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