Influence of strain and polarisation on electronic properties of a GaN/AlN quantum dot

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Young, Toby D ^a   Marquardt, Oliver ^b  

^a POLISH ACADEMY OF SCIENCES   (Poland)

^b MAX PLANCK INSTITUT FÜR EISENFORSCHUNG GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONFINEMENT PROPERTIES; COUPLED FIELDS; HOLE WAVE FUNCTIONS; MODEL-BASED; PIEZO-ELECTRIC FIELDS; PIEZOELECTRIC PROPERTY; POLARISATION; QUANTUM DOT; SEMICONDUCTOR NANOSTRUCTURES;

ELECTRONIC PROPERTIES; HETEROJUNCTIONS; PIEZOELECTRICITY;

HAMILTONIANS;

EID: 75749090517     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880901     Document Type: Article

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